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| NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ZTX650 ZTX651 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C derate above 25C SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX651 MAX. MIN. TYP. 80 60 5 0.1 10 IEBO VCE(sat) VBE(sat) VBE(on) 0.12 0.23 0.9 0.8 0.1 0.3 0.5 1.25 1 0.12 0.23 0.9 0.8 0.1 10 0.1 0.3 0.5 1.25 1 MAX. ZTX650 60 45 5 6 2 1 5.7 E-Line TO92 Compatible ZTX651 80 60 UNIT V V V A A W mW/C C Operating and Storage Temperature Range ZTX650 MIN. TYP. 60 45 5 -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL UNIT CONDITIONS. V V V A A A A A Collector-Base V(BR)CBO Breakdown Voltage Collector-Emitter V(BR)CEO Breakdown Voltage Emitter-Base V(BR)EBO Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage ICBO IC=100A IC=10mA* IE=100A VCB=45V VCB=60V VCB=45V,Tamb=100C VCB=60V,Tamb=100C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* V V V V 3-219 ZTX650 ZTX651 PARAMETER SYMBOL ZTX650 MIN. TYP. Transition Frequency Switching Times fT ton toff Output Capacitance Cobo 140 175 45 800 30 ZTX651 MAX. MIN. TYP. 140 175 45 800 30 MAX. MHz ns ns pF IC=100mA, VCE=5V f=100MHz IC=500mA, VCC=10V IB1=IB2=50mA VCB=10V f=1MHz UNIT CONDITIONS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT C/W C/W C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissipation - (Watts) Thermal Resistance (C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-220 ZTX650 ZTX651 TYPICAL CHARACTERISTICS 0.6 0.5 225 0.4 0.3 0.2 0.1 0 VCE(sat) - (Volts) IC/IB=10 hFE - Gain 175 VCE=2V 125 75 0 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 1.2 1.2 VBE(sat) - (Volts) 1.0 VBE - (Volts) 1.0 VCE=2V 0.8 IC/IB=10 0.8 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse Test at Tamb=25C td tr tf ns 140 VBE(on) v IC IC - Collector Current (Amps) IB1=IB2=IC/10 ts ns 1400 1200 1000 800 600 400 200 0 0.01 td ts 1 120 Switching time 100 80 60 40 20 0.1 D.C. 1s 100ms 10ms 1.0ms 100s tf tr ZTX650/51-5 0.01 0.1 1 ZTX650 ZTX651 0 0.1 1 10 100 VCE - Collector Voltage (Volts) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 3-221 |
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